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RUE002N02
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
I GSS
V (BR)DSS
I DSS
V GS(th)
?
R DS(on)
|Y fs | ?
C iss
C oss
C rss
Min.
?
20
?
0.3
?
?
?
?
200
?
?
?
Typ.
?
?
?
?
0.8
1.0
1.2
1.6
?
25
10
10
Max.
± 10
?
1
1
1.2
1.4
2.4
4.8
?
?
?
?
Unit
μ A
V
μ A
V
?
?
?
?
mS
pF
pF
pF
Conditions
V GS =± 8V, V DS = 0V
I D = 1mA, V GS = 0V
V DS = 20V, V GS = 0V
V DS = 10V, I D = 1mA
I D = 200mA, V GS = 2.5V
I D = 200mA, V GS = 1.8V
I D = 40mA, V GS = 1.5V
I D = 20mA, V GS = 1.2V
V DS = 10V, I D = 200mA
V DS = 10V
V GS = 0V
f = 1MHz
Turn-on delay time
t d(on) ?
?
5
?
ns
V DD
10V, I D = 150mA
Rise time
t r
?
?
10
?
ns
V GS = 4.0V
Turn-off delay time
t d(off) ?
?
15
?
ns
R L
67 ?
Fall time
t f ?
?
10
?
ns
R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 100mA, V GS =0V
? Pulsed
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2009.06 - Rev.A
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